High-voltage rf operation of AlGaN/GaN heterojunction FETs
β Scribed by Kuzuhara, M. ;Miyamoto, H. ;Ando, Y. ;Inoue, T. ;Okamoto, Y. ;Nakayama, T.
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 196 KB
- Volume
- 200
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In this paper, the structure and processing of AlGaN/GaN high electron mobility transistors have been optimized for maximum small signal gain at high frequencies. The effect of the gate resistance, gateβtoβdrain capacitance and output conductance on the power gain cutβoff frequency, __f
## Abstract In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure β shown schematically and in a scan