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N-AlGaN/p-InGaN/n-GaN Heterojunction Bipolar Transistors for High Power Operation

✍ Scribed by T. Makimoto; K. Kumakura; N. Kobayashi

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
113 KB
Volume
0
Category
Article
ISSN
1862-6351

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## Abstract We report ultra‐high‐power performance on __npn__ GaN/InGaN double heterojunction bipolar transistors (DHBTs) that is directly grown on a free‐standing (FS) GaN substrate. Measured common‐emitter current gain (__h__~fe~) reaches 80. A quasi‐static __I__–__V__ measurement shows that __J_