GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm2)
✍ Scribed by Lee, Yi-Che ;Zhang, Yun ;Lochner, Zachary M. ;Kim, Hee-Jin ;Ryou, Jae-Hyun ;Dupuis, Russell D. ;Shen, Shyh-Chiang
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 275 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We report ultra‐high‐power performance on npn GaN/InGaN double heterojunction bipolar transistors (DHBTs) that is directly grown on a free‐standing (FS) GaN substrate. Measured common‐emitter current gain (h~fe~) reaches 80. A quasi‐static I–V measurement shows that J~C~ > 141 kA/cm^2^ and a power density of 3.05 MW/cm^2^ can be achieved for DHBTs grown on an FS‐GaN substrate. When the temperature is increased to 250 °C, a GaN/InGaN DHBT shows h~fe~ = 43 and the offset voltage is reduced from 0.8 V at the room temperature to 0.3 V. Similarly, the knee voltage is reduced from 5.2 V at room temperature to 2.75 V at 250 °C. In this particular device, breakdown voltage (BV~CEO~) increases from 90 V at room temperature to 157 V at 250 °C.