𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of the degradation of AlGaN/GaN HEMTs by high-temperature operation tests

✍ Scribed by Lee, Jong-Min; Min, Byoung-Gue; Ju, Cheol-Won; Ahn, Ho-Kyun; Mun, Jae-Kyoung; Lim, Jong-Won; Nam, Eunsoo


Book ID
125416500
Publisher
The Korean Physical Society
Year
2014
Tongue
English
Weight
324 KB
Volume
64
Category
Article
ISSN
0374-4884

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Optimization of AlGaN/GaN HEMTs for high
✍ Palacios, T. ;Dora, Y. ;Chakraborty, A. ;Sanabria, C. ;Keller, S. ;DenBaars, S. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 233 KB

## Abstract In this paper, the structure and processing of AlGaN/GaN high electron mobility transistors have been optimized for maximum small signal gain at high frequencies. The effect of the gate resistance, gate‐to‐drain capacitance and output conductance on the power gain cut‐off frequency, __f

Optimization of AlGaN/GaN HEMTs for high
✍ Palacios, T. ;Dora, Y. ;Chakraborty, A. ;Sanabria, C. ;Keller, S. ;DenBaars, S. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 371 KB

## Abstract In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure – shown schematically and in a scan

Effects of high temperature on the elect
✍ Y. Guhel; B. Boudart; V. Hoel; M. Werquin; C. Gaquiere; J. C. De Jaeger; M. A. P πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 98 KB

## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera