## Abstract In this paper, the structure and processing of AlGaN/GaN high electron mobility transistors have been optimized for maximum small signal gain at high frequencies. The effect of the gate resistance, gateβtoβdrain capacitance and output conductance on the power gain cutβoff frequency, __f
Analysis of the degradation of AlGaN/GaN HEMTs by high-temperature operation tests
β Scribed by Lee, Jong-Min; Min, Byoung-Gue; Ju, Cheol-Won; Ahn, Ho-Kyun; Mun, Jae-Kyoung; Lim, Jong-Won; Nam, Eunsoo
- Book ID
- 125416500
- Publisher
- The Korean Physical Society
- Year
- 2014
- Tongue
- English
- Weight
- 324 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0374-4884
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## Abstract In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure β shown schematically and in a scan
## Abstract Highβtemperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These highβtempera