Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent
โฆ LIBER โฆ
Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors
โ Scribed by Ye Wang; Xiao Wei Sun; Goh, G.K.L.; Demir, H.V.; Hong Yu Yu
- Book ID
- 114620292
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 598 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0018-9383
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