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Influence of the semi-conductor layer thickness on electrical performance of staggered n- and p-channel organic thin-film transistors

โœ Scribed by D. Boudinet; M. Benwadih; S. Altazin; R. Gwoziecki; J.M. Verilhac; R. Coppard; G. Le Blevennec; I. Chartier; G. Horowitz

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
725 KB
Volume
11
Category
Article
ISSN
1566-1199

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โœ Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 751 KB

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent