Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor

✍ Scribed by Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Yu; Qing Wan

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 751 KB
• Volume: 87
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.12.081

✦ Synopsis

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent. With the active layer thickness from 33 to 114 nm, the field-effect mobility l FE increased from 1.60 to 4.59 cm 2 /V s, the threshold voltage V TH decreased from 62.26 to 20.82 V, and the subthreshold voltage swing S decreased from 4.06 V/decade to 1.30 V/decade. Further, the dependence of TFTs' electrical properties on active layer thickness was investigated in detail on the basis of free carrier density and interface scattering.