✦ LIBER ✦

Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors

✍ Scribed by C.H. Woo; Y.Y. Kim; B.H. Kong; H.K. Cho

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 712 KB
Volume: 205
Category: Article
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2010.07.036

No coin nor oath required. For personal study only.

✦ Synopsis

InGaZnO thin-film-transistors (TFTs) with various channel thicknesses were fabricated with a bottom gate configuration on SiO 2 /p-Si substrates at room temperature by radio frequency magnetron sputtering. The thickness of the InGaZnO channel layer ranged from 20 to 200 nm and the width/length ratio of the channel was 10. In the channel layers with an electrical resistivity of ~10 3 Ω cm, TFTs with a 130 nm thick layer showed the best performance, such as on/off-current ratio (~10 7 ), channel field-effect mobility (7.2 cm 2 /V s) and subthreshold swing (0.7 V/dec). In addition, the InGaZnO TFT device showed slight gate bias-induced hysteresis due to the small charge traps in the active layer and long-term reliability.

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