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Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors

✍ Scribed by Cheol Hyoun Ahn; Dong Kyu Seo; Chang Ho Woo; Hyung Koun Cho

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 366 KB
Volume: 404
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2009.08.171

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