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Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors

✍ Scribed by Dong-Suk Han, Yeon-Keon Moon, Sih Lee, Kyung-Taek Kim, Dae-Yong Moon, Sang-Ho Lee, Woong-Sun Kim, Jong-Wan Park

Book ID
118816406
Publisher
Springer US
Year
2012
Tongue
English
Weight
609 KB
Volume
41
Category
Article
ISSN
0361-5235

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Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent