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The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors

✍ Scribed by Youngbin Ko; Seokhwan Bang; Seungjun Lee; Soyeon Park; Joohyun Park; Hyeongtag Jeon

Book ID
112183239
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
292 KB
Volume
5
Category
Article
ISSN
1862-6254

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Thermal activation effects on the stoich
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## Abstract The thermal activation effects on the stoichiometry of indium zinc oxide (IZO) thin‐film transistors (TFTs) deposited by radio frequency magnetron sputtering process under different oxygen pressure, were investigated as a function of annealing temperature and environment conditions. The