Al O gate dielectric thin films were deposited by reactive dc magnetron sputtering. The electrical properties 2 3 and the carrier transport mechanisms were studied. The results indicate that higher temperature annealing in oxygen ambient is helpful to improve the electrical properties of Al O gate d
β¦ LIBER β¦
Effects of the interfacial layer on electrical characteristics of Al2O3/TiO2/Al2O3 thin films for gate dielectrics
β Scribed by Chang Eun Kim; Ilgu Yun
- Book ID
- 116244843
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 750 KB
- Volume
- 258
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Electrical properties of Al2O3 gate diel
β
Changhai Lin; Jinfeng Kang; Dedong Han; Dayu Tian; Wei Wang; Jinghua Zhang; Meng
π
Article
π
2003
π
Elsevier Science
π
English
β 119 KB
Interfacial and Electrical Characterizat
β
Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; Dashen Shen
π
Article
π
2009
π
Elsevier
β 336 KB
HfO 2 gate dielectric films with a blocking layer of Al 2 O 3 inserted between HfO 2 layer and Si layer (HfO 2 /Si) were treated with rapid thermal annealing process at 700 . The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed tha
Electrical and interfacial characteristi
β
Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Zhitang Song; Chenglu Lin; Anpin
π
Article
π
2006
π
Elsevier Science
π
English
β 455 KB
Electrical characteristics of Al2O3/TiO2
β
Yen, Chih-Feng; Lee, Ming-Kwei; Lee, Jung-Chan
π
Article
π
2014
π
Elsevier Science
π
English
β 455 KB
Atomic layer deposition of TiO 2 and Al
β
Mitchell, D R G; Triani, G; Attard, D J; Finnie, K S; Evans, P J; BarbΓ©, C J; Ba
π
Article
π
2005
π
Institute of Physics
π
English
β 438 KB
Electrical and structural characteristic
β
C.L Sun; S.Y Chen; M.Y Yang; Albert Chin
π
Article
π
2003
π
Elsevier Science
π
English
β 168 KB