๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electrical properties of Al2O3 gate dielectrics

โœ Scribed by Changhai Lin; Jinfeng Kang; Dedong Han; Dayu Tian; Wei Wang; Jinghua Zhang; Meng Liu; Xiaoyan Liu; Ruqi Han

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
119 KB
Volume
66
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

โœฆ Synopsis

Al O gate dielectric thin films were deposited by reactive dc magnetron sputtering. The electrical properties 2 3 and the carrier transport mechanisms were studied. The results indicate that higher temperature annealing in oxygen ambient is helpful to improve the electrical properties of Al O gate dielectric films with few interfacial 2 3 traps formed at the Al O / Si interface and the carrier transport mechanisms are dominate by thermionic 2 3 emission.

๐Ÿ“œ SIMILAR VOLUMES

Interfacial and Electrical Characterizat
Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3
โœ Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; Dashen Shen ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier โš– 336 KB

HfO 2 gate dielectric films with a blocking layer of Al 2 O 3 inserted between HfO 2 layer and Si layer (HfO 2 /Si) were treated with rapid thermal annealing process at 700 . The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed tha

Effects of oxygen content and postdeposi
Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics
โœ Tung-Ming Pan; Chun-Chin Huang ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 571 KB

In this paper, we describe the physical properties and electrical characteristics of thin Sm 2 O 3 dielectric films deposited on Si (100) by means of rf reactive sputtering. The structural and morphological features of these films were studied, as a function of the growth conditions (three various a