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Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

✍ Scribed by Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Zhitang Song; Chenglu Lin; Anping Huang; Paul K. Chu

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
455 KB
Volume
9
Category
Article
ISSN
1369-8001

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Interfacial and Electrical Characterizat
Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3
✍ Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; Dashen Shen πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier βš– 336 KB

HfO 2 gate dielectric films with a blocking layer of Al 2 O 3 inserted between HfO 2 layer and Si layer (HfO 2 /Si) were treated with rapid thermal annealing process at 700 . The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed tha