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Point defects in Al2O3 and their impact on gate stacks

✍ Scribed by J.R. Weber; A. Janotti; C.G. Van de Walle

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
365 KB
Volume
86
Category
Article
ISSN
0167-9317

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In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of