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Effect of Ti doping on Ta2O5 stacks with Ru and Al gates

✍ Scribed by A. Paskaleva; M. Tapajna; E. Atanassova; K. Frohlich; A. Vincze; E. Dobročka

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
845 KB
Volume
254
Category
Article
ISSN
0169-4332

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Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta 2 O 5 ) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employ