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The Influence of Channel Compositions on the Electrical Properties of Solution-Processed Indium-Zinc Oxide Thin-Film Transistors

✍ Scribed by Chang-Ken Chen; Hsing-Hung Hsieh; Jing-Jong Shyue; Chung-Chih Wu


Book ID
115368673
Publisher
Institute of Electrical and Electronics Engineers
Year
2009
Tongue
English
Weight
875 KB
Volume
5
Category
Article
ISSN
1551-319X

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Influence of the channel layer thickness
✍ Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 751 KB

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent