## Abstract The thermal activation effects on the stoichiometry of indium zinc oxide (IZO) thinβfilm transistors (TFTs) deposited by radio frequency magnetron sputtering process under different oxygen pressure, were investigated as a function of annealing temperature and environment conditions. The
β¦ LIBER β¦
Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance
β Scribed by McDowell, M.G.; Hill, I.G.
- Book ID
- 114619320
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 585 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0018-9383
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