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Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

โœ Scribed by Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.


Book ID
121701538
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
527 KB
Volume
555
Category
Article
ISSN
0040-6090

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Influence of the channel layer thickness
โœ Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 751 KB

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent