Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors
β Scribed by Jang, Kyungsoo; Raja, Jayapal; Lee, Youn-Jung; Kim, Doyoung; Yi, Junsin
- Book ID
- 121711626
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 394 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0741-3106
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## Abstract The thermal activation effects on the stoichiometry of indium zinc oxide (IZO) thinβfilm transistors (TFTs) deposited by radio frequency magnetron sputtering process under different oxygen pressure, were investigated as a function of annealing temperature and environment conditions. The
Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent