𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structural and electrical properties of the europium-doped indium zinc oxide thin film transistors

✍ Scribed by Ting, Chu-Chi; Li, Wei-Yang; Wang, Ching-Hua; Yong, Hua-En


Book ID
121820153
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
800 KB
Volume
562
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Influence of the channel layer thickness
✍ Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 751 KB

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent