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Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering

✍ Scribed by Hai-Qin Huang; Feng-Juan Liu; Jian Sun; Jian-Wei Zhao; Zuo-Fu Hu; Zhen-Jun Li; Xi-Qing Zhang

No coin nor oath required. For personal study only.

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