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Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

✍ Scribed by Nie, H. B. (author);Xu, S. Y. (author);Wang, S. J. (author);You, L. P. (author);Yang, Z. (author);Ong, C. K. (author);Li, J. (author);Liew, T. Y.F. (author)


Publisher
Springer Verlag
Year
2001
Tongue
English
Weight
905 KB
Volume
73
Category
Article
ISSN
1432-0630

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Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comp