Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing
โ Scribed by S.V. Jagadeesh Chandra; Chel-Jong Choi; S. Uthanna; G. Mohan Rao
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 755 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1369-8001
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dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in the range 303-973 K. The variation of cathode potent
## Abstract Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and crystalline silicon (111) substrates held at room temperature by sputtering of tantalum in an oxygen partial pressure of 1x10^โ4^ mbar. The films were annealed in air for an hour in the