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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and of 370 GHz

✍ Scribed by Yuanzheng Yue; Zongyang Hu; Jia Guo; Sensale-Rodriguez, B.; Guowang Li; Ronghua Wang; Faria, F.; Tian Fang; Bo Song; Xiang Gao; Shiping Guo; Kosel, T.; Snider, G.; Fay, P.; Jena, D.; Huili Xing

Book ID: 115484246
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 463 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2012.2196751

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