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[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE

✍ Scribed by Milosavljevic, I.; Shinohara, K.; Regan, D.; Burnham, S.; Corrion, A.; Hashimoto, P.; Wong, D.; Hu, M.; Butler, C.; Schmitz, A.; Willadsen, P.J.; Micovic, M.

Book ID: 121863910
Publisher: IEEE
Year: 2010
Weight: 1001 KB
Category: Article
ISBN: 1424465621
DOI: 10.1109/DRC.2010.5551886

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