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[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

✍ Scribed by Lu, Bin (author);Piner, Edwin L. (author);Palacios, Tomás (author)

No coin nor oath required. For personal study only.

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