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AlGaN/GaN HEMTs on Si by MBE with regrown contacts and f T = 153 GHz

✍ Scribed by Ganguly, Satyaki; Song, Bo; Hwang, Wan Sik; Hu, Zongyang; Zhu, Mingda; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

No coin nor oath required. For personal study only.

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