Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr or Hf

✍ Scribed by Kuzmik, J.; Pozzovivo, G.; Abermann, S.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Grandjean, N.; Bertagnolli, E.; Strasser, G.; Pogany, D.

• Book ID: 114619137
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 211 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.915089