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Proposal and Performance Analysis of Normally Off GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

✍ Scribed by Kuzmik, J.; Ostermaier, C.; Pozzovivo, G.; Basnar, B.; Schrenk, W.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Grandjean, N.; Douvry, Y.; Gaquière, C.; De Jaeger, J.-C.; Čičo, K.; Fröhlich, K.; Škriniarová, J.; Kováč, J.; Strasser, G.; Pogany, D.; Gornik, E.


Book ID
114620094
Publisher
IEEE
Year
2010
Tongue
English
Weight
613 KB
Volume
57
Category
Article
ISSN
0018-9383

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The effects of thicknesses, alloy fraction and doping density of different layers in a novel pseudomorphic n-GaN/In x Al 1 À x N/AlN/GaN ultrathin barrier heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-lin