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Impact of Polarity of Gate Bias and Hf Concentration on Breakdown of HfSiON/ Gate Dielectrics

✍ Scribed by Sato, M.; Hirano, I.; Aoyama, T.; Sekine, K.; Kobayashi, T.; Yamaguchi, T.; Eguchi, K.; Tsunashima, Y.

No coin nor oath required. For personal study only.

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