Electron beam lithography is available in fabrication for ASIC-LSIs in order to contribute QTAT process and cost saving for optical reticle making. On the other hand, the optical lithography is facing difficulty in the resolution for isolated pattern arrangement under quarter micron region even if K
β¦ LIBER β¦
IIIB-5 high voltage electron beam lithography for VLSI fabrication
β Scribed by Yoshimi, M.; Takahashi, M.; Kawabuchi, K.; Kato, Y.; Takigawa, T.
- Book ID
- 114594243
- Publisher
- IEEE
- Year
- 1982
- Tongue
- English
- Weight
- 202 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
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