The present position and future status of electron beam lithography for VLSI fabrication
β Scribed by T. Matsuzaka
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 386 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
β¦ Synopsis
Electron beam lithography is available in fabrication for ASIC-LSIs in order to contribute QTAT process and cost saving for optical reticle making. On the other hand, the optical lithography is facing difficulty in the resolution for isolated pattern arrangement under quarter micron region even if KrF excimer laser lithography is used. It is expected that the electron beam lithography will play a complementary role for the opticallithography.
The mix-and-match strategy will be open the door for the large volume production-use of the electron beam lithography.
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## Abstract Metal nanowires are one of the potential candidates for nanostructured sensing elements used in future portable devices for chemical detection; however, the optimal methods for fabrication have yet to be fully explored. Two routes to nanowire fabrication, electronβbeam lithography (EBL)