We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we a
β¦ LIBER β¦
T-gate and airbridge fabrication for MMICs by combining multi-voltage electron-beam lithography and ion-beam lithography
β Scribed by R.G. Woodham; R.M. Jones; D.G. Hasko; J.R.A. Cleaver; H. Ahmed
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 360 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0167-9317
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