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High brightness sources for electron and ion beam microscopy and micro-lithography

✍ Scribed by G.L.R. Mair; T. Mulvey

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
369 KB
Volume
15
Category
Article
ISSN
0304-3991

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TEM sample preparation, VLSI, semiconductor processing, Defect analysis A cross-sectional sample preparation technique is described that relies on lithographic and dry-etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross-sectional trans