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Preparation of cross-sectional transmission electron microscopy samples by electron beam lithography and reactive ion etching

✍ Scribed by Wetzel, J. T.


Publisher
Wiley (John Wiley & Sons)
Year
1989
Tongue
English
Weight
764 KB
Volume
11
Category
Article
ISSN
0741-0581

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✦ Synopsis


TEM sample preparation, VLSI, semiconductor processing, Defect analysis A cross-sectional sample preparation technique is described that relies on lithographic and dry-etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross-sectional transmission electron microscopy samples with a large amount of transparent area (1 pm x 2.5 mm) which allows the examination of many patterned test sites on the same sample from the same chip of a silicon wafer. An example of the application of the technique is given for localized oxidation through a mask.


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