A novel cross-sectional sample preparation technique for quantum wire (QWR) structures is described. By coating a thin layer of Au with a designed pattern on the sample as a marker to indicate the position of the wire pattern, the location of the thinned area can be controlled precisely. An example
Preparation of cross-sectional transmission electron microscopy samples by electron beam lithography and reactive ion etching
β Scribed by Wetzel, J. T.
- Publisher
- Wiley (John Wiley & Sons)
- Year
- 1989
- Tongue
- English
- Weight
- 764 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0741-0581
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β¦ Synopsis
TEM sample preparation, VLSI, semiconductor processing, Defect analysis A cross-sectional sample preparation technique is described that relies on lithographic and dry-etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross-sectional transmission electron microscopy samples with a large amount of transparent area (1 pm x 2.5 mm) which allows the examination of many patterned test sites on the same sample from the same chip of a silicon wafer. An example of the application of the technique is given for localized oxidation through a mask.
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## Abstract The surface properties of materials are believed to control most of the biological reactions toward implanted materials. To study the surface structure, elemental distribution, and morphology, using transmission electron microscopy (TEM) techniques, thin foils of the surface (in crossβs
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