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0.15 μm T-gate E-beam lithography using crosslinked P(MMA/MMA) developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production

✍ Scribed by A. Hülsmann; E. Mühlfriedel; B. Raynor; K. Glorer; W. Bronner; K. Köhler; Jo. Schneider; J. Braunstein; M. Schlechtweg; P. Tasker; A. Thiede; T. Jakobus


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
418 KB
Volume
23
Category
Article
ISSN
0167-9317

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