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[IEEE Proceedings of International Reliability Physics Symposium - Dallas, TX, USA (1996.04.30-1996.05.2)] Proceedings of International Reliability Physics Symposium RELPHY-96 - Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxides

✍ Scribed by Hemink, G.J.; Shimizu, K.; Aritome, S.; Shirota, R.

Book ID: 126604443
Publisher: IEEE
Year: 1996
Weight: 633 KB
Category: Article
ISBN-13: 9780780327535
DOI: 10.1109/RELPHY.1996.492070

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