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[IEEE Proceedings of International Reliability Physics Symposium - Dallas, TX, USA (1996.04.30-1996.05.2)] Proceedings of International Reliability Physics Symposium RELPHY-96 - Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation

✍ Scribed by Wristers, D.; Wang, H.H.; Wolf, I.D.; Han, L.K.; Kwong, D.L.; Fulford, J.

Book ID: 126601405
Publisher: IEEE
Year: 1996
Weight: 754 KB
Category: Article
ISBN-13: 9780780327535
DOI: 10.1109/RELPHY.1996.492064

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