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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Advanced gate stacks with fully silicided (FUSI) gates and high-k dielectrics. enhanced performance at reduced gate leakage

✍ Scribed by Gusev, E.P.; Cabral, C.; Linder, B.P.; Kim, Y.H.; Maitra, K.; Cartier, E.; Nayfeh, H.; Amos, R.; Biery, G.; Bojarczuk, N.; Callegari, A.; Carruthers, R.; Cohen, S.A.; Copel, M.; Fang, S.; Frank, M.; Guha, S.; Gribelyuk, M.; Jamison, P.; Jarnmy, R.; Teong, M.; Kedzierski, J.; Kozlowski, P.; Ku, V.; Lacey, D.; LaTulipe, D.; Narayanan, V.; Ng, H.; Nguyen, P.; Newbury, J.; Paruchuri, V.; Rengarajan, R.; Shahidi, G.; Steegen, A.; Steen, M.; Zafar, S.; Zhang, Y.

Book ID: 126681072
Publisher: IEEE
Year: 2004
Weight: 258 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419071

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