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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Interface engineering for enhanced electron mobilities in W/HfO/sub 2/ gate stacks

✍ Scribed by Callegari, A.; Jamison, P.; Cartier, E.; Zafar, S.; Gusev, E.; Narayanan, V.; D'Emic, C.; Lacey, D.; Feely, F.Mc.; Jammy, R.; Gribelyuk, M.; Shepard, J.; Andreoni, W.; Curioni, A.; Pignedoli, C.

Book ID: 121466652
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 221 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419304

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