𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Lateral IMPATT diodes in standard CMOS technology

✍ Scribed by Al-Attar, T.; Mulligan, M.D.; Lee, T.H.

Book ID: 127388058
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 191 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/iedm.2004.1419187

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE IEDM Technical Digest. IEEE Intern

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Record RF performance of standard 90 nm CMOS technology

✍ Tirmejer, L.F.; Havens, R.J.; de Kort, R.; Scholten, A.J.; van Langevelde, R.; K 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 249 KB

[IEEE IEDM Technical Digest. IEEE Intern

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - 3.3 ps SiGe bipolar technology

✍ Bock, J.; Schafer, H.; Knapp, H.; Aufinger, K.; Wurzer, M.; Boguth, S.; Bottner, 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 212 KB

[IEEE IEDM Technical Digest. IEEE Intern

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Spintronic materials and devices: past, present and future!

✍ Parkin, S.S.P. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 294 KB

[IEEE IEDM Technical Digest. IEEE Intern

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Transient-induced latchup in CMOS technology: physical mechanism and device simulation

✍ Ming-Dou Ker, Sheng-Fu Hsu 📂 Article 📅 2004 🏛 IEEE ⚖ 266 KB

[IEEE IEDM Technical Digest. IEEE Intern

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Status and outlook of emerging nonvolatile memory technologies

✍ Muller, G.; Happ, T.; Kund, M.; Lee, G.Y.; Nagel, N.; Sezi, R. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 257 KB

[IEEE IEDM Technical Digest. IEEE Intern

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Novel carbon nanotube FET design with tunable polarity

✍ Yu-Ming Lin, ; Appenzeller, J.; Avouris, P. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 261 KB