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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Transient-induced latchup in CMOS technology: physical mechanism and device simulation

✍ Scribed by Ming-Dou Ker, Sheng-Fu Hsu

Book ID: 126723960
Publisher: IEEE
Year: 2004
Weight: 266 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419338

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