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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - A comprehensive model for breakdown mechanism in HfO/sub 2/ high-κ gate stacks

✍ Scribed by Ranjan, R.; Pey, K.L.; Tung, C.H.; Tang, L.J.; Groeseneken, G.; Bera, L.K.; De Gendt, S.

Book ID: 120004384
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 336 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419273

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