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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Suppression of kink phenomenon in ultra-high-speed strained InAs-inserted E-mode HEMTs with a new 0.1μm Y-shaped pt-buried gate and their impacts on device performance

✍ Scribed by Dae-Hyun Kim, Tae-Woo Kim

Book ID: 126654527
Publisher: IEEE
Year: 2004
Weight: 285 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419365

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