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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - A 0.13μm MRAM with 0.26X0.44μm/sup 2/ MTJ optimized on universal MR-RA relation for 1.2V high-speed operation beyond 143MHz

✍ Scribed by Ueno, S.; Eimori, T.; Kuroiwa, T.; Furuta, H.; Tsuchimoto, J.; Macjima, S.; Iida, S.; Ohshita, H.; Hasegawa, S.; Hirano, S.; Yamaguchi, T.; Kurisu, H.; Ymani, A.; Hashikawa, N.; Maeda, H.; Ogawa, Y.; Kawabata, K.; Okumura, Y.; Tsuji, T.; Ohtani, J.; Tanizaki, T.; Yamaguchi, Y.; Ohishi, T.; Hidaka, H.; Takenaga, T.; Beysen, S.; Kobayashi, H.; Oomori, T.; Koga, T.; Ohji, Y.

Book ID: 126654526
Publisher: IEEE
Year: 2004
Weight: 218 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419226

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