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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - A new vertically stacked poly-Si MOSFET for 533MHz high speed 64Mbit SRAM

✍ Scribed by T. Kikuchi, S. Moriya

Book ID: 126768329
Publisher: IEEE
Year: 2004
Weight: 226 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419333

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