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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Aggressively scaled (0.143 μm/sup 2/ ) 6T-SRAM cell for the 32 nm node and beyond

✍ Scribed by Fried, D.M.; Hergenrother, J.M.; Topol, A.W.; Chang, L.; Sekaric, L.; Sleight, J.W.; McNab, S.J.; Newbury, J.; Steen, S.E.; Gibson, G.; Zhang, Y.; Fuller, N.C.M.; Bucchignano, J.; Lavoie, C.; Cabral, C.; Canaperi, D.; Dokumaci, O.; Frank, D.J.; Duch, E.A.; Babich, I.; Wong, K.; Ott, J.A.; Adams, C.D.; Dalton, T.J.; Nunes, R.; Medeiros, D.R.; Viswanathan, R.; Ketchen, M.; Ieong, M.; Haensch, W.; Guarini, K.W.

Book ID: 126662948
Publisher: IEEE
Year: 2004
Weight: 337 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419127

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