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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs

✍ Scribed by Singh, D.V.; Solomon, P.; Gusev, E.P.; Singeo, G.; Ren, Z.

Book ID: 125981610
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 256 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419315

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