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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

✍ Scribed by Lee, B.H.; Young, C.D.; Choi, R.; Sim, J.H.; Bersuker, G.; Kang, C.Y.; Harris, R.; Brown, G.A.; Matthews, K.; Song, S.C.; Moumen, N.; Barnett, J.; Lysaght, P.; Choi, K.S.; Wen, H.C.; Huffman, C.; Alshareef, H.; Majhi, P.; Gopalan, S.; Peterson, J.; Kirsh, P.; Li, H.-J.; Gutt, J.; Gardner, N.; Huff, H.R.; Zeitzoff, P.; Murto, R.W.; Larson, L.; Ramiller, C.

Book ID: 121409571
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 333 KB
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/IEDM.2004.1419314

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